HgCdTe（MCT）多通道檢測(cè)模塊

簡(jiǎn)要描述：HgCdTe（MCT）多通道檢測(cè)模塊提供針對(duì)不同波長(zhǎng)的四象限和多元線陣探測(cè)器模塊，基于HgCdTe材料，集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。

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更新時(shí)間：2023-08-20
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品牌	其他品牌	價(jià)格區(qū)間	面議
產(chǎn)地類(lèi)別	國(guó)產(chǎn)	應(yīng)用領(lǐng)域	環(huán)保,化工

HgCdTe（MCT）多通道檢測(cè)模塊

VIGO Photonics 提供針對(duì)不同波長(zhǎng)的四象限和多元線陣探測(cè)器模塊，基于HgCdTe材料，集成了跨阻抗、直流耦合四通道前置放大器、TE制冷和風(fēng)扇。四象限模塊適合用于測(cè)量光束的移動(dòng)或作為對(duì)準(zhǔn)系統(tǒng)的反饋；多元線陣探測(cè)器多用于非接觸式的溫度測(cè)量，常用于鐵路運(yùn)輸。除標(biāo)準(zhǔn)5μm和10.6μm模塊，根據(jù)不同應(yīng)場(chǎng)景，可接受定制。

四象限模塊

1、QM-5，四象限，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
Parameter	Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm	3.5±0.5
Peak wavelength λpeak, µm	4.5±0.5
Optimum wavelength λopt, µm	5
Cut-off wavelength λcut-off (10%), µm	6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W	≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W	≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2	≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W	≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W	≥1.6×105
Low cut-off frequency flo, Hz	DC
High cut-off frequency fhi, Hz	≥1M
Output impedance Rout, Ω	50
Output voltage swing Vout (RL = 1 MΩ*)), V	0 – 4
Output voltage offset Voff, mV	max ±20
Power supply voltage Vsup, VDC	7.5
Power consumption, W	max 6
Other information
Active elements material	epitaxial HgCdTe heterostructure
Active areas A, mm×mm	4×(0.2×0.2)
Distance between active elements, mm	0.02
Window	pSiAR
Acceptance angle Φ	~70°
Ambient operating temperature Ta, °C	10 to 30
Signal output sockets	4×MCX
Power supply socket	DC 2.1/5.5
Mounting hole	M4
Fan	yes

2、QM-10.6，四象限，非制冷模塊，光敏面4×(1×1)

Specification (Ta = 20°C)
Parameter	Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm	3.0±1.0
Peak wavelength λpeak, µm	8.0±2.0
Optimum wavelength λopt, µm	10.6
Cut-off wavelength λcut-off (10%), µm	12.0±1.0
Detectivity D*(λpeak), cm·Hz1/2/W	≥1.0×107
Detectivity D*(λopt), cm·Hz1/2/W	≥4.5×106
Output noise density vn(100 kHz) µV/Hz1/2	≤4.5
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W	≥2.2×102
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W	≥1.1×102
Low cut-off frequency flo, Hz	DC
High cut-off frequency fhi, Hz	≥1M
Output impedance Rout, Ω	50
Output voltage swing Vout(RL = 1 MΩ*)), V	0 – 4
Output voltage offset Voff, mV	max ±20
Power supply voltage Vsup, VDC	7.5
Power consumption, W	max 6
Other information
Active elements material	epitaxial HgCdTe heterostructure
Active areas A, mm×mm	4×(1×1)
Distance between active elements, mm	0.15±0.1
Window	none
Acceptance angle Φ	~70°
Ambient operating temperature Ta, °C	10 to 30
Signal output sockets	4×MCX
Power supply socket	DC 2.1/5.5
Mounting hole	M4
Fan	yes

HgCdTe（MCT）多通道檢測(cè)模塊多元線陣模塊

1、4EM-5，1×4線陣，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C)
Parameter	Typical value
Optical characteristics
Cut-on wavelength λcut-on (10%), µm	3.5±0.5
Peak wavelength λpeak, µm	4.5±0.5
Optimum wavelength λopt, µm	5
Cut-off wavelength λcut-off (10%), µm	6.0±0.5
Detectivity D*(λpeak), cm·Hz1/2/W	≥7.0×109
Detectivity D*(λopt), cm·Hz1/2/W	≥6.8×109
Output noise density vn(100 kHz), nV/Hz1/2	≤500
Electrical parameters
Voltage responsivity Rv(λpeak, RL = 1 MΩ*)), V/W	≥1.7×105
Voltage responsivity Rv(λopt, RL = 1 MΩ*)), V/W	≥1.6×105
Low cut-off frequency flo, Hz	DC
High cut-off frequency fhi, Hz	≥1M
Output impedance Rout, Ω	50
Output voltage swing Vout (RL = 1 MΩ*)), V	0 – 4
Output voltage offset Voff, mV	max ±20
Power supply voltage Vsup, VDC	7.5
Power consumption, W	max 6
Other information
Active elements material	epitaxial HgCdTe heterostructure
Active areas A, mm×mm	4×(0.2×0.2)
Distance between active elements, mm	0.05
Window	pSiAR
Acceptance angle Φ	~70°
Ambient operating temperature Ta, °C	10 to 30
Signal output sockets	4×MCX
Power supply socket	DC 2.1/5.5
Mounting hole	M4
Fan	yes

2、4EM-5，1×32線陣，制冷模塊，光敏面4×(0.2×0.2)

Specification (Ta = 20°C, Vb = 0 mV)	Detection module type
Parameter	Detection module type
Parameter	32EM-5-01	32EM-5-02
Optical characteristics
Cut-on wavelength λcut-on (10%), µm	≤2.0	3.7±0.2
Peak wavelength λpeak, µm	4.25±0.2	4.75±0.2
Optimal wavelength λopt, µm	5	5
Cut-off wavelength λcut-off (10%), µm	5.6±0.2	5.8±0.2
Detectivity D*(λpeak), cm·Hz1/2/W	≥3.5×109	≥2.4×109
Detectivity D*(λopt), cm·Hz1/2/W	≥2.2×109	≥2.2×109
Electrical parameters
Voltage responsivity Rv(λpeak, RLoad = 1 MΩ), V/W	≥3.5×104	≥5.0×104
Voltage responsivity Rv(λopt, RLoad = 1 MΩ), V/W	≥2.2×104	≥4.6×104
Low cut-off frequency flo, Hz	DC	DC
High cut-off frequency fhi, kHz	≥400	≥650
Output impedance Rout, Ω	50	50
Output voltage swing Vout (RLoad = 1 MΩ), V	-1 (negative output)	-1 (negative output)
Output voltage offset Voff, mVDC	max -200	max -200
Power supply voltage Vsup, VDC	5	5
Other information
Active elements material	epitaxial HgCdTe heterostructure
Number of elements	1×32 linear array
Active area of single element A, mm×mm	0.125×1	0.1×0.1
Distance between active elements, µm	25	50
Window	pAl2O3AR
Acceptance angle Φ	~70°
Ambient operating temperature Ta, °C	10 to 30

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HgCdTe（MCT）多通道檢測(cè)模塊

四象限模塊

HgCdTe（MCT）多通道檢測(cè)模塊多元線陣模塊

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